Principial research associate of the Department for physics of semiconductors, Dr. Sci., Professor.
Personal data
Born on 30 January, 1957
Research interests
the Physics of semiconductors and nanostructures, spectroscopy.
Education
School
School #181 in Nizhniy Novgorod.
University
the Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod.
Career
- 1979 - 1991 - engineer, research associate, senior research associate of the Physical Technical Research Institute;
- 1991 - 1994 - senior research associate of the IAP RAS;
- 1994 - present - senior research associate, leading research associate, principial research associateof the IPM RAS.
Publications
The conduction band and selection rules for interband optical transitions in strained Ge1-xSix/Ge and Ge1-xSix/Si heterostructures / V. Ya. Aleshkin, N. A. Bekin, J. Phys. Condens. Matter 9, 4841 (1997);
Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure / V. Ya Aleshkin, A. A. Andronov, A. V. Antonov, V. I. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov and E. A. Uskova, Semicond. Sci. Tecnol. 15, 1049 (2000);
Coherent approach to transport and noise in double-barrier resonant diodes / V. Ya. Aleshkin, L. Reggiani, N. V. Alkeev, V. E. Lyubchenko, C. N. Lodge, J. M. L. Figuerido and C. R. Stanley, " Phys. Rev. B 70, 115321 (2004);
Nonlinear mode mixing in dual-wavelength semiconductor lasers with tunnel junctions / S. M. Nekorkin, A. A. Biryukov, P. B. Demina, N. N. Semenov, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, A. A. Belyanin, V. V. Kocharovsky, and Vl. V. Kocharovsky, Appl. "Phys. Lett. 90, 171106 (2007);
Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors / V. Ya. Aleshkin, D. I. Burdeiny, L. V. Gavrilenko, Semicond. Sci. Technol. 25 (8), 085005 (2010);
Contact detail
Phone: +7 (831) 417-94-82 +234