Principial research associate of the Department for physics of semiconductors, Dr. Sci., Professor.
Born on 30 January, 1957
the Physics of semiconductors and nanostructures, spectroscopy.
School #181 in Nizhniy Novgorod.
the Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod.
- 1979 - 1991 - engineer, research associate, senior research associate of the Physical Technical Research Institute;
- 1991 - 1994 - senior research associate of the IAP RAS;
- 1994 - present - senior research associate, leading research associate, principial research associateof the IPM RAS.
The conduction band and selection rules for interband optical transitions in strained Ge1-xSix/Ge and Ge1-xSix/Si heterostructures / V. Ya. Aleshkin, N. A. Bekin, J. Phys. Condens. Matter 9, 4841 (1997);
Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure / V. Ya Aleshkin, A. A. Andronov, A. V. Antonov, V. I. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. G. Revin, B. N. Zvonkov and E. A. Uskova, Semicond. Sci. Tecnol. 15, 1049 (2000);
Coherent approach to transport and noise in double-barrier resonant diodes / V. Ya. Aleshkin, L. Reggiani, N. V. Alkeev, V. E. Lyubchenko, C. N. Lodge, J. M. L. Figuerido and C. R. Stanley, " Phys. Rev. B 70, 115321 (2004);
Nonlinear mode mixing in dual-wavelength semiconductor lasers with tunnel junctions / S. M. Nekorkin, A. A. Biryukov, P. B. Demina, N. N. Semenov, B. N. Zvonkov, V. Ya. Aleshkin, A. A. Dubinov, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, A. A. Belyanin, V. V. Kocharovsky, and Vl. V. Kocharovsky, Appl. "Phys. Lett. 90, 171106 (2007);
Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors / V. Ya. Aleshkin, D. I. Burdeiny, L. V. Gavrilenko, Semicond. Sci. Technol. 25 (8), 085005 (2010);
Phone: +7 (831) 417-94-82 +234