Drozdov Yurii

Leading research associate of heterostructure technology department, Dr. Sci.

Personal data

Born on 7 July, 1947, Kirov. Married.

Research interests

X-Ray diffractometry, analysis of epitaxial structures, growth of thin films.

Education

• 1965 — School #4 in Nizhniy Novgorod;
• 1970 — the Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod;
• 1974 — defended PhD thesis «Modern methods of analysis of functions of Paterson. Crystal structure of the mineral vuonnemit and two synthetic vanadates of silver»;
• 2006 — defended his doctoral dissertation «X-Ray diffractometry heteroepytaxial layers and multilayer structures on their basis».

Career

• 1970 — 1978 — junior / senior research associate of the Gorky research physico-technical Institute (GIFTI of GGU);
• 1978 — 1992 — head of the laboratory, GIFTI;
• 1992 — 1994 — senior research associate of the Institute of Applied Physics RAS;
• 1994 — 2006 — senior research associate of the Institute for Physics of Microstructures RAS.
• 2007 — present — leading research associate of the IPM RAS

Publications

• Spatial separation of: vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature // Yu. I. Danilov, H. Boudinov, J. P. de Souza, Yu. N. Drozdov. The Journal of Applied Physics 97, 076106 (2005);
• Photoluminescence of Ge (Si) self-assembled islands embedded in a tensile-strained Si layer /M.V. Shaleev, A. V. Novikov, A. N. Yablonsky, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasil’nik, O. A. Kuznetsov //Appl. Phys. Lett. — 2006. — V.88. -P.011914.
• A nanomechanical system with piezoelectric actuation of a GaAs microbeam / E. A. Vopilkin, V. I. Shashkin, Y. N. Drozdov, V. M. Daniltsev, S. A. Gusev and I Yu Shuleshova // J. Micromech. Microeng. Vol.18, No. 9, 095006 (5pp) 2008.
• Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si (001) heterostructures with strained layers / D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, and A. V. Novikov // Appl. Phys. Lett. 95, 151902 (2009).
• Ferromagnetic semiconductor InMnAs layers grown by pulsed laser deposition on GaAs / Yu. A. Danilov, A. V. Kudrin, O. V. Vikhrova, B. N. Zvonkov, Yu. N. Drozdov, M. V. Sapozhnikov, S. Nicolodi, E. R. Zhiteytsev, N. M. Santos, M. C. Carmo, N. A. Sobolev // J. Phys. D: Appl. Phys. — 2009. — V.42. — P.035006.
• PECVD growth of crystalline silicon from its tetrafluoride / P. Sennikov, D. Pryakhin, N. Abrosimov, B. Andreev, L. Gavrilenko, Yu. Drozdov, M. Drozdov, A. Kuznetsov, A. Murel, H.-J.Pohl, H. Riemann, V. Shashkin // Cryst. Res. Technol. 2010. V.45. No9. P.899−908.
• Fabrication and Study of Spin Light-Emitting Nanoheterostructures on the Basis of III-V Semiconductors / Yu. A. Danilov, Yu. N. Drozdov, M. V. Dorokhin, V. D. Kulakovskii, M. M. Prokof’eva, S. V. Zaitsev and B. N. Zvonkov // Solid State Phenomena Vols. 168−169 (2011) pp 55−58.
• Towards 0.99999 ²⁸Si / P. G. Sennikov, A. V. Vodopyanov, S. V. Golubev, D. A. Mansfeld, M. N. Drozdov, Yu. N. Drozdov, B. A. Andreev, L. V. Gavrilenko, D. A. Pryakhin, V. I. Shashkin, O. N. Godisov, A. I. Glasunov, A. Ju. Safonov, H.-J. Pohl, M. L. W. Thewalt, P. Becker, H. Riemann, N. V. Abrosimov, S. Valkiers // Solid State Communications 152 (2012) 455−457.

Contact detail