Orlova Ekaterina

Research associate of the Department for physics of semiconductors, PhD in Physics.

Research interests

Nonequilibrium population of the impurity states in semiconductors, amplification of terahertz radiation, electrodynamics of semiconductor lasers, Rabi impurity atoms.

Career

• 1984 — 1989 — student of Radiophysics faculty of the Gorky state University ;
• 1989 — 1990 — engineer research Radiophysics Institute
• 1990 — 1992 — trainee researcher of the department for physics of semiconductors of the Institute of Applied Physics RAS;
• 1993 — present — junior research associate, research associate of the department for physics of semiconductors of the Institute for Physics of Microstructures RAS;

In 2002 defended a PhD thesis on the topic of «Nonequilibrium population of shallow impurity states in semiconductors and amplification of radiation of far infrared range».

In 2003−2005 held scientific training in the group of Prof. P. Harrison at the University of Leeds, UK and in groups of Prof. W. Wenckebach and Prof. T. Klapwijkat Delft University of Technology, Delft, Netherlands.

Participated in more than 40 international conferences in Russia and abroad; 29 articles published in leading national and international journals (full list contains about seventy scientific papers).

Publications

• E.Е. Orlova, R. Kh. Zhukavin, S. G. Pavlov, V. N. Shastin, 1998, Far infrared active media based on the shallow impurity states transitions in silicon, Physica Status Solidi (b), 210, 859.
• S.G. Pavlov, R. Kh. Zhukavin, E. E. Orlova, V. N. Shastin, A. V. Kirsanov, H.-W. Huebers, K. Auen, H. Riemann, 2000, Stimulated emission from donor transitions in silicon, Phys. Rev. Lett. 84, 5220.
• E.E. Orlova, S. G. Pavlov, R. Kh. Zhukavin, V. N. Shastin, A. V. Kirsanov, H.-W. Huebers, K. Auen, M. Rummeli, H. P. Roeser, and H. Riemann, 2001, FIR Lasing Based on Group V Donor Transitions in Silicon, Physica B 302−303, 342.
• V.N. Shastin, R. Kh. Zhukavin, E. E. Orlova, S. G. Pavlov, M. H. Rummeli, H.-W. Hubers, J. N. Hovenier, T. O. Klaassen, H. Riemann, I. V. Bradley, A. F. G. van der Meer, 2002, Stimulated THz emission from group V donors in silicon under intra-center photoexcitation, Appl. Phys. Lett. 80, 3512.
• E.E. Orlova, 2002, Longliving donor states in silicon — life time calculation, 26 International Conference on Physics of Semiconductors, Edinburgh, UK, P61.
• J.N. Hovenier, E. E. Orlova, T. O. Klaassen and W. T. Wenckebach, 2002, Transverse mode structure and output stability of the p-Ge terahertz laser, IEEE Journal of Quantum Electronics 38, pp.353.
• V.N. Shastin, E. E. Orlova, R. K. Zhukavin, S. G. Pavlov, H. W. Hubers, H. Riemann, Silicon lasers based on shallow donor centres — Theoretical background and experimental results, in «Towards the First Silicon Laser», L. Pavesi et al. (eds.), NATO Science Series I. I., Vol. 93, Kluwer Academic Publishers, pp. 341−350, 2003.
• E.E. Orlova, P. Harrison, Effect of confinement on the lifetimes of shallow impurity states in quantum wells, Appl. Phys. Lett. 85, 5257, 2004.
• E.E. Orlova, P. Harrison, W.-M. Cheng, M. Halsall, Влияние локализации в квантовой яме на время жизни мелких примесных состояний, ФТП, 39, 67−70, 2005.
• T.O. Klaassen, E. E. Orlova, J. N. Hovenier «Negative photoconductivity due to coherent trapping of electrons in n-GaAs«, Proceedings of Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, September 19−23, 2005, Williamsburg, Virginia USA, p. 182−183.
• E.E. Orlova, D. V. Kozlov, A. V. Antonov, J. N. Hovenier, T. O. Klaassen, A. J. L. Adam, M. S. Kagan, I. V. Altukhov, Q. V. Nguyen, D. A. Carder, P. J. Phillips, and B. Redlich, Perspectives of acceptor lasing in strained SiGe structures, Nanostructures: Physics and Technology, St. Petersburg, Russia, June 20−25, 2005, p. 110.
• A.J. L. Adam, I. Kasalynas, J. N. Hovenier, T. O. Klaassen, J. R. Gao, E. E. Orlova, B. S. Williams, S. Kumar, Q. Hu, J. L. Reno, 2006, Beam patterns of terahertz quantum cascade lasers with subwavelength cavity dimensions, Appl. Phys. Lett. 88, 151105.
• E.E. Orlova, J. N. Hovenier, T. O. Klaassen, I. Kasalynas, A. J. L. Adam, J. R. Gao, T. M. Klapwijk, B. S. Williams, S. Kumar, Q. Hu, J. L. Reno, 2006, Antenna model for wire lasers, Phys. Rev. Lett. 96, 173904.

Contact detail