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The Institute for Physics of Microstructures of the Russian Academy of Sciences

- the branch of the Federal research center Institute of Applied Physics of the Russian Academy of Sciences named after A. V. Gaponov-Grekhov

RU

The Institute for Physics of Microstructures of the Russian Academy of Sciences

- the branch of the Federal research center Institute of Applied Physics of the Russian Academy of Sciences named after A. V. Gaponov-Grekhov

Pashenkin Igor

Pashenkin Igor

Junior Researcher

Born on 17 October, 1994 in Dalnekonstantinovsky district, Nizhny Novgorod Region. Married

Research interests

Magnetic nanostructures; magnetoelectric effects; hybrid nanostructures ferromagnet/insulator, including magnetic tunnel junctions, memristive structures

Education

  • 2016 -graduated from the bachelor course of the Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod
  • 2018 — graduated from the magistracy of the Faculty of physics of N. I. Lobachevsky State University of Nizhniy Novgorod

Career

  • 2017 г. — technician of the Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod
  • 2018 г. — engineer of the Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod
  • 2018−2019 гг. — engineer of the Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
  • 2019 г. — present. — Junior Researcher of the Institute of Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Publications

  1. Study of the Structures of Cleaved Cross Sections by Raman Spectroscopy / Plankina S. M., Vikhrova O. V., Danilov Yu. A., Zvonkov B. N., Konnova N. Yu., Nezhdanov A. V., Pashenkin I. Yu. // Semiconductors, Vol. 50, No. 11, pp. 1539−1542 (2016)
  2. Cleaved-Edge Photoluminescence Spectroscopy of Multilayer Heterostructures / Plankina S. M., Vikhrova O. V., Zvonkov B. N., Nezhdanov A. V., Pashenkin I. Yu. // Semiconductors, Vol. 51, No. 11, pp. 1456−1459 (2017)
  3. Modification of the Properties of Ferromagnetic Layers Based on A3B5 Compounds by Pulsed Laser Annealing / Vikhrova O. V., Danilov Yu. A., Zvonkov B. N., Zdoroveishchev A. V., Kudrin A. V., Lesnikov V. P., Nezhdanov A. V., Pavlov S. A., Paraffin A. E., Pashenkin I. Yu., Plankina S. M. // Physics of the Solid State, Vol. 59, No. 11, pp. 2150−2154 (2017)
  4. Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates / Samartsev I. V., Nekorkin S. M., Zvonkov B. N., Aleshkin V. Ya., Dubinov A. A., Pashenkin I. J., Dikareva N. V, Chigineva A. B. // Semiconductors, Vol. 52, No. 12, pp. 1564−1567 (2018)
  5. Interaction of Ferromagnetic Layers through a Magnetic Crossbar / Pashen’kin I. Yu., Gorev R. V., Fraerman A. A. // Physics of the Solid State, Vol. 61, No. 9, pp. 1599−1601 (2019)
  6. Peculiarities of the Nonlinear Responseof a Superconductor-Normal Metal Structure with a Large Ratio of Resistivities / Pestov E. E., Nozdrin Yu. N., Rogov V. V., Pashen’kin I. Yu., Vodolazov D. Yu. // Physics of the Solid State, Vol. 61, No. 9, pp. 1539−1543 (2019)
  7. On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures /Plankina S. M., Vikhrova O. V., Zvonkov B. N., Zubkov S. Yu., Kriukov R. N., Nezhdanov A. V., Pavlov D. A., Pashen’kin I. Yu., Sushkov A. A. // Semiconductors, Vol. 53, No. 9, pp. 1207−1210 (2019)

Contact detail

Phone: 417−94−88 + 121

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