The Institute for Physics of Microstructures of the Russian Academy of Sciences
- the branch of the Federal research center Institute of Applied Physics of the Russian Academy of Sciences named after A. V. Gaponov-Grekhov
Rumyantsev Vladimir
Head of the laboratory “Semiconductor light sources for the infrared and terahertz ranges”
Personal data
Born on 9 August, 1988
Research interests
Narrow gap semiconductors, infrared photoluminescence, physics of low-dimensional structures, semiconductor lasers, photoconductivity, shallow impurities, carrier recombination
Education
- 2005 — 2011 Advanced School of General and Applied Physics of N.I. Lobachevsky State University of Nizhniy Novgorod;
- 2015 — PhD in Physics.
Career
- 2009 — 2011 — engineer of the Institute for Physics of Microstructures RAS, Nizhny Novgorod, a student of the interfaculty base chair of «Physics of nanostructures and nanoelectronics»;
- 2011 — 2015 — junior research associate of IPM RAS, Nizhniy Novgorod;
- 2015 — 2019 — research associate of IPM RAS, Nizhniy Novgorod;
- 2019 — 2024 — senior research associate of IPM RAS, Nizhniy Novgorod;
- 2024 — Lab Head at the IPM RAS, Nizhniy Novgorod.
Publications
- Spectra and kinetics of THz photoconductivity in narrow-gap Hg1-xCdxTe (x < 0.2) epitaxial films /
V. V. Rumyantsev ,S. V. Morozov ,K. E. Kudryavtsev ,A. V. Antonov ,V. I. Gavrilenko ,S. A. Dvoretskii ,N. N. Mikhailov , Semicond. Sci. Technol. 28 125007 (2013).
Contact detail
Phone: +7 (831) 417-94-82 +262
E-mail: rumyantsev@ipmras.ru