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Старший научный сотрудник отдела физики полупроводников, к.ф.-м.н.
Родился 9 августа 1988 года.
Физика полупроводников, наноструктуры, фотопроводимость, фотолюминесценция, дальний инфракрасный диапазон, узкозонные полупроводники, мелкие примеси.
Rumyantsev, V.V.; Dubinov, A.A.; Utochkin, V.V.; Fadeev, M.A.; Aleshkin, V.Y.; Razova, A.A.; Mikhailov, N.N.; Dvoretsky, S.A.; Gavrilenko, V.I.; Morozov, S.V. Stimulated emission in 24–31 μm range and «Reststrahlen» waveguide in HgCdTe structures grown on GaAs. Applied Physics Letters 2022, 121, 182103, doi:10.1063/5.0128783.
Rumyantsev, V.V.; Razova, A.A.; Bovkun, L.S.; Tatarskiy, D.A.; Mikhailovskii, V.Y.; Zholudev, M.S.; Ikonnikov, A.V.; Uaman Svetikova, T.A.; Maremyanin, K.V.; Utochkin, V.V.; et al. Optical Studies and Transmission Electron Microscopy of HgCdTe Quantum Well Heterostructures for Very Long Wavelength Lasers. Nanomaterials 2021, 11, 1855, doi:10.3390/nano110718551.
Morozov, S.V.; Rumyantsev, V.V.; Zholudev, M.S.; Dubinov, A.A.; Aleshkin, V.Y.; Utochkin, V.V.; Fadeev, M.A.; Kudryavtsev, K.E.; Mikhailov, N.N.; Dvoretskii, S.A.; et al. Coherent Emission in the Vicinity of 10 THz due to Auger-Suppressed Recombination of Dirac Fermions in HgCdTe Quantum Wells. ACS Photonics 2021, 8, 3526-3535, doi:10.1021/acsphotonics.1c01111.
Rumyantsev, V., A. Razova, M. Fadeev, V. Utochkin, N. Mikhailov, S. Dvoretsky, V. Gavrilenko and S. Morozov. "Urbach tail and nonuniformity probe of HgCdTe thin films and quantum well heterostructures grown by molecular beam epitaxy." Optical Engineering 60(8): 082007. (2020)
S. S. Krishtopenko, S. Ruffenach, F. Gonzalez-Posada, G. Boissier, M. Marcinkiewicz, M. A. Fadeev, A. M. Kadykov, V. V. Rumyantsev, S. V. Morozov, V. I. Gavrilenko, C. Consejo, W. Desrat, B. Jouault, W. Knap, E. Tournié, and F. Teppe, "Temperature-dependent terahertz spectroscopy of inverted-band three-layer InAs/GaSb/InAs quantum well," Physical Review B 97, 245419 (2018).
HgCdTe-based heterostructures for terahertz photonics / S. Ruffenach, A. Kadykov, V. V. Rumyantsev, J. Torres, D. Coquillat, D. But, S. S. Krishtopenko, C. Consejo, W. Knap, S. Winnerl, M. Helm, M. A. Fadeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, and F. Teppe APL Materials, V. 5, I. 3, p. 035503 (2017)
Long wavelength stimulated emission up to 9.5 μm from HgCdTe quantum well heterostructures / S.V. Morozov, V.V. Rumyantsev, A.M. Kadykov, A.A. Dubinov, K.E. Kudryavtsev, A.V. Antonov, N.N. Mikhailov, S.A. Dvoretskii, and V.I. Gavrilenko // Appl. Phys. Lett. — Vol. 108. — P. 092104 (2016)
Terahertz photoconductivity of double acceptors in narrow gap HgCdTe epitaxial films grown by molecular beam epitaxy on GaAs (013) and Si (013) substrates / Rumyantsev, V. V., D. V. Kozlov, S. V. Morozov, M. A. Fadeev, A. M. Kadykov, F. Teppe, V. S. Varavin, M. V. Yakushev, N. N. Mikhailov, S. A. Dvoretskii and V. I. Gavrilenko. // Semiconductor Science and Technology 32 (9): 095007 (2017)
Stimulated emission from HgCdTe quantum well heterostructures at wavelengths up to 19.5 μm / Morozov, S.V., V.V. Rumyantsev, M.A. Fadeev, M.S. Zholudev, K.E. Kudryavtsev, A.V. Antonov, A.M. Kadykov, A.A. Dubinov, N.N. Mikhailov, S.A. Dvoretsky, and V.I. Gavrilenko // Applied Physics Letters. 111 (19): p. 192101 (2017)