2008 год

Terahertz Raman laser based on silicon doped with phosphorus / S. G. Pavlov, H.-W. Hübers, U. Böttger, R. Kh. Zhukavin, V. N. Shastin, J. N. Hovenier, B. Redlich, N. V. Abrosimov, and H. Riemann, Applied Physics Letters 92, 091111 (2008);
Injection-seeded internal-reflection-mode p-Ge laser exceeds 10 W peak terahertz power / A. V. Muravjov, H. Saxena, R. E. Peale, C. J. Fredricksen, O. Edwards, and V. N. Shastin, Journal of Applied Physics 103, 083112 (2008);
Evidence of noncascade intracenter electron relaxation in shallow donor centers in silicon / S. G. Pavlov, H.-W. Hübers, P. M. Haas, J. N. Hovenier, T. O. Klaassen, R. Kh. Zhukavin, V. N. Shastin, D. A. Carder and B. Redlich, Physical Review B 78, 165201 (2008);
Room-temperature intracavity difference-frequency generation in butt-joint diode lasers / B. N. Zvonkov, A. A. Biryukov, A. V. Ershov, S. M. Nekorkin, V. Ya. Aleshkin, V. I. Gavrilenko, A. A. Dubinov, K. V. Maremyanin, S. V. Morozov A. A. Belyanin, V. V. Kocharovsky, Vl. V. Kocharovsky, Applied Physics Letters 92, 021122 (2008);
Multi-crystalline silicon as active medium for terahertz intracenter lasers / S. G. Pavlov, H.-W. Hubers, N. V. Abrosimov, H. Riemann, L. V. Gavrilenko, A. V. Antonov, Physica B 403, 535 (2008);
High field electron dynamics in dilute nitride GaAsN / S. Spasov, G. Allison, A. Patane, L. Eaves, M. Yu. Tretyakov, A. Ignatov, M. Hopkinson, and G. Hill, Applied Physics Letters 93, 022111 (2008);
Quasi-guided electromagnetic beam propagation in one dimensional photonic crystal with a left-handed metamaterial / A. A. Zharov and N. A. Zharova, Journal of Applied Physics 103, 013109 (2008);

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