2009 год
Меню
EN

Институт физики микроструктур РАН

- филиал Федерального государственного бюджетного научного учреждения "Федеральный исследовательский центр Институт прикладной физики им. А.В. Гапонова-Грехова Российской академии наук" (ИФМ РАН)

EN

Институт физики микроструктур РАН

- филиал Федерального государственного бюджетного научного учреждения "Федеральный исследовательский центр Институт прикладной физики им. А.В. Гапонова-Грехова Российской академии наук" (ИФМ РАН)

2009 год



  • Electron Bloch Oscillations and Electromagnetic Transparency of Semiconductor Superlattices in Multi-Frequency Electric Fields / Yu. A. Romanov, J. Yu. Romanova, and L. G. Mourokh, Physical Review B 79, 245320 (2009);
  • High-field splitting of the cyclotron resonance absorption in strained p-InGaAsХGaAs quantum wells / O. Drachenko, D. V. Kozlov, V. Ya. Aleshkin, V. I. Gavrilenko, K. V. Maremyanin, A. V. Ikonnikov, B. N. Zvonkov, M. Goiran, J. Leotin, G. Fasching, S. Winnerl, H. Schneider, J. Wosnitza, and M. Helm, Physical Review B 79, 073301 (2009);
  • Plasmon-induced terahertz radiation generation due to symmetry breaking in a nonlinear metallic nanodimer / A. A. Zharov, R. E. Noskov, and M. V. Tsarev, Journal of Applied Physics 106, 073104 (2009).
  • Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots / N. Sustersic, L. Nataraj, C. Weiland, M. Coppinger, M. V. Shaleev, A. V. Novikov, R. Opila, S. G. Cloutier, and J. Kolodzey, Applied Physics Letters 94, 183103 (2009);
  • Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers / D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, and A. V. Novikov, Applied Physics Letters 95, 151902 (2009);
  • Features of two-dimensional to three-dimensional growth mode transition of Ge in SiGe/Si(001) heterostructures with strained layers / D. V. Yurasov, Yu. N. Drozdov, M. V. Shaleev, and A. V. Novikov, Applied Physics Letters 95, 151902 (2009);
  • Stimulated terahertz emission due to electronic Raman scattering in silicon / S. G. Pavlov, U. Böttger, J. N. Hovenier, N. V. Abrosimov, H. Riemann, R. Kh. Zhukavin, V. N. Shastin, B. Redlich, A. F. G. van der Meer, and H.-W. Hübers, Applied Physics Letters 94, 171112 (2009);
  • Terahertz laser with optically pumped graphene layers and Fabry-Perrot resonator / A. A. Dubinov, V. Ya. Aleshkin, M. Ryzhii, T. Otsuji, V. Ryzhii, Applied Physics Express 2, 092301 (2009);
  • Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov, P. Werner, Physica E 41, 935 (2009);
  • Features of erbium nonradiative deexcitation and electroluminescence temperature quenching in sublimation MBE grown Si: Er/Si diode structures / K. E. Kudryavtsev, V. P. Kuznetsov, D. V. Shengurov, V. B. Shmagin and Z. F. Krasilnik, Physica E 41(6), 899 (2009);
  • Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3-1.55 μm / D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, A. N. Yablonskiy, A. V. Antonov, Yu. N. Drozdov, D. V. Shengurov, V. B. Shmagin, Z. F. Krasilnik, N. D. Zakharov and P. Werner, Physica E 41(6), 935 (2009);
  • Quantum cascade laser design based on impurity-band transitions of donors in Si/GeSi(111) heterostructures / N. A. Bekin, S. G. Pavlov, Physica B 404, 4716 (2009).

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